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Piotrowski, Jerzy
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article
Characterization of Finite-Width Ground Coplanar Waveguides on High Resistivity Silicon With Ultralow Metallization Thickness
Abstract
In this paper, we report the microwave properties of finite-ground coplanar waveguides (CPWs) fabricated on a thermally oxidized high resistivity silicon substrate. The ultralow metallization thickness indicates a gold metallization with a thickness in the range from 10 to 100 nm. We present measured magnitudes and phases of the S₁₁ and S₂₁ parameters of the CPW segments in the frequency range from 0.1 to 26 GHz, which are transformed based on the signal flow graph to the characteristic impedance Z₀, the attenuation coefficient α , and the effective dielectric constant ϵeff. We analyze the CPW attenuation dependence on the metallization thickness based on the α (f) =α₀·(f/1 GHz)n model.