| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Darakchieva, Vanya
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024High-field/high-frequency electron spin resonances of Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> by terahertz generalized ellipsometry: Monoclinic symmetry effectscitations
- 2024High-field/high-frequency electron spin resonances of Fe-doped β-Ga2 O3 by terahertz generalized ellipsometry : Monoclinic symmetry effectscitations
- 2024Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicatecitations
- 2024Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structurescitations
- 2023Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substratescitations
- 2023Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor depositioncitations
- 2023Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifierscitations
- 2023Observations of very fast electron traps at SiC/high-κ dielectric interfacescitations
- 2023Observations of very fast electron traps at SiC/high-κ dielectric interfacescitations
- 2022Mg-doping and free-hole properties of hot-wall MOCVD GaNcitations
- 2022Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVDcitations
- 2022Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)citations
- 2022Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layerscitations
- 2022Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVDcitations
- 2022Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategiescitations
- 2022Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system : Process parameters for a low surface roughnesscitations
- 2022Doped semiconducting polymer nanoantennas for tunable organic plasmonicscitations
- 2021Tunable Structural Color Images by UV-Patterned Conducting Polymer Nanofilms on Metal Surfacescitations
- 2020Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templatescitations
- 2020Conductive polymer nanoantennas for dynamic organic plasmonicscitations
- 2019Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivitycitations
- 2015Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InNcitations
- 2014Effect of Mg doping on the structural and free-charge carrier properties of InNcitations
- 2013Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effectcitations
- 2012Direct graphene growth on Co3O4(111) by molecular beam epitaxycitations
- 2011Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopycitations
- 2011Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layercitations
- 2010Structural anisotropy of nonpolar and semipolar InN epitaxial layerscitations
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article
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Abstract
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $ {m}$ -thick drift layer, a low ON-resistance below 0.05 ${m}$ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.