| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lind, Erik
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Low temperature atomic hydrogen annealing of InGaAs MOSFETscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substratescitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performancecitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2014InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.citations
- 2014Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistorscitations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2013Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistorscitations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2004Resonant tunneling permeable base transistor based pulsed oscillator
- 2004Tunneling Based Electronic Devices
Places of action
| Organizations | Location | People |
|---|
article
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Abstract
In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low subthreshold swings (SSs) down to around 70 mV/dec. For a 1- $ {m}$ -thick drift layer, a low ON-resistance below 0.05 ${m}$ cm2 (normalized on the fin area) and a breakdown voltage of 60 V were obtained. Devices with included PMA show a decreased threshold voltage and ON-resistance and by several orders of magnitude reduced gate leakage current compared to non-annealed devices. The devices show ohmic contact behavior and slightly negative threshold voltages, which indicates normally- ON behavior. The effective and field-effect mobility of the fin channel was obtained with a modeled carrier concentration and reveal to around 70 and 13 cm2/(Vs) at high gate voltages, which is in a good comparison to so far reported similar devices.