| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Schramm, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
Places of action
| Organizations | Location | People |
|---|
article
0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes
Abstract
Solution-based deposition, with its simplicity and possibility for upscaling through printing, is a promising process for low-cost electronics. Metal oxide semiconductor devices, especially indium oxide with its excellent electrical properties, offer high performance compared to amorphous Si-based rivals, and with a form factor conducive to flexible and wearable electronics. Here, rectifying diodes based on an amorphous spin-coated indium oxide are fabricated for high-speed applications. We report a solution-processed diode approaching the UHF range, based on indium oxide, with aluminum and gold as the electrodes. The device was spin-coated from a precursor material and configured into a half-wave rectifier. The J-V and frequency behavior of the diodes were studied, and the material composition of the diode was investigated by X-ray photoemission spectroscopy (XPS). The 3-dB point was found to be over 700 MHz. The results are promising for the development of autonomously powered wireless Internet-of-Things systems based on scalable, low-cost processes.