| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Todri-Sanial, Aida
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Non-volatile resistive switching mechanism in single-layer MoS2 memristorscitations
- 2023Non-volatile resistive switching mechanism in single-layer MoS2 memristors:insights from ab initio modelling of Au and MoS2 interfacescitations
- 2023Roadmap for Unconventional Computing with Nanotechnology
- 2022First-Principles Simulations of Vacancies and Grain Boundaries in Monolayer MoS2-Au Interfaces for Unconventional Computing Paradigm
- 2020Stretchable Strain Sensors for Human Movement Monitoringcitations
- 2019Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applicationscitations
- 2019Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applicationscitations
- 2019Microelectronics Department Half-Day Seminar
- 2018Atomistic- to Circuit-Level Modeling of Doped SWCNT for On-Chip Interconnectscitations
- 2017Design methodology for 3D power delivery networks
- 2015Design Methodology for 3D Power Delivery Networks
- 2014Globally Constrained Locally Optimized 3-D Power Delivery Networkscitations
- 2014Design Space Exploration Of Emerging Technologies For Energy Efficiency
- 2014Habilitation - Design Space Exploration Of Emerging Technologies For Energy Efficiency
Places of action
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article
Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications
Abstract
n this paper, we investigate, by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.