| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khorramdel, Behnam
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2018High-resolution E-jet Enhanced MEMS Packaging
- 2017Inkjet printing technology for increasing the I/O density of 3D TSV interposerscitations
- 2017Combination of E-jet and inkjet printing for additive fabrication of multilayer high-density RDL of silicon interposercitations
- 2016Fabrication and electrical characterization of partially metallized vias fabricated by inkjetcitations
- 2015Metallization of high density TSVs using super inkjet technologycitations
Places of action
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article
Combination of E-jet and inkjet printing for additive fabrication of multilayer high-density RDL of silicon interposer
Abstract
The additive nature and high resolution of electrohydrodynamic inkjet (E-jet) printing can be utilized for manufacturing micrometer scale conductive tracks such as those required in the high-density redistribution layers (RDLs) of silicon interposers used in electronics packaging for 3-D integration. Compared to the current lithographic fabrication method, this approach promises to increase the customizability of the process and reduce the amount of waste materials, thereby lowering the costs and the environmental impact of the manufacturing process. In this paper, multilayer interdigitated capacitor and meander resistor structures with 5/5 μm conductor width/spacing are used to demonstrate the feasibility of E-jet printing of high-density multilayer RDLs. A sheet resistance of 28.5 Ω/square was achieved for the first metallization layer (MET1) conductors and 313.2 7Ω/square for the MET2 conductors. The thickness of the conductors was 6.9 μm for MET1 and 5.4 μm for MET2. ; Peer reviewed