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| Naji, M. |
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Cristiano, Fuccio
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation
- 2023Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloyscitations
- 2023Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser
- 2022Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealingcitations
- 2022Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Filmscitations
- 2022Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealingcitations
- 2022Multiscale modeling of ultrafast melting phenomenacitations
- 2022Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAscitations
- 2021Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substratecitations
- 2021Stress relaxation and dopant activation in nsec laser annealed SiGe
- 2021Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Studycitations
- 2021Laser annealing processes in semiconductor technology
- 2021Laser annealing processes in semiconductor technology ; Laser annealing processes in semiconductor technology: Theory, modeling, and applications in nanoelectronics
- 2020Implant heating contribution to amorphous layer formation: a KMC approachcitations
- 2020Undoped SiGe material calibration for numerical nanosecond laser annealing simulationscitations
- 2019On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted siliconcitations
- 2019Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
- 2018Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors:investigation of interfacial and structural propertiescitations
- 2017Structural and mechanical characterization of hybrid metallic-inorganic nanosprings
- 2017Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Defect investigation of excimer laser annealed silicon
- 2016Differential Hall characterisation of shallow strained SiGe layers
- 2014Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealingcitations
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2013Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties
- 2008Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealingcitations
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article
Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
Abstract
In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier concentration above 1020 cm −3 was achieved in n-type doped regions, which enables low access resistance in Ge devices. Furthermore, the LTA process was optimized to achieve a diode I on/I off ratio ∼ 105 and ideality factor (n) ∼ 1.2, as it allows excellent junction depth control when combined with optimized implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance.