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| Naji, M. |
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| Motta, Antonella |
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| Ertürk, Emre |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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Cha, Dong Kyu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2014Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayerscitations
- 2013Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistorscitations
- 2013High-performance ferroelectric memory based on phase-separated films of polymer blendscitations
- 2011Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin filmscitations
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article
Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors
Abstract
We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.