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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Missous, Mohamed
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2023A Novel Method for Detecting the Onset and Location of Mechanical Failure by Correlating Engineering Stress with Changes in Magnetic Properties of UNS S32205 Duplex Stainless Steel Using Quantum Well Hall Effect Sensors
- 2023A Novel Method for Detecting the Onset and Location of Mechanical Failure by Correlating Engineering Stress with Changes in Magnetic Properties of UNS S32205 Duplex Stainless Steel Using Quantum Well Hall Effect Sensors
- 2023Magnetic Imaging of Corrosion under Insulation using Quantum Well Hall Effect Sensors
- 2021Targeted defect analysis in VCSEL oxide windows using 3D slice and viewcitations
- 2021Direct Synthesis of Nanostructured Silver Antimony Sulfide Powders from Metal Xanthate Precursorscitations
- 2021Molecular Precursor Route to Bournonite (CuPbSbS3) Thin Films and Powderscitations
- 2021A new high-frequency eddy current technique for detection and imaging of flaws in carbon fibre-reinforced polymer materials
- 2019Surface-breaking flaw detection in mild steel welds using quantum well hall effect sensor devicescitations
- 2019A molecular precursor route to quaternary chalcogenide CFTS (Cu2FeSnS4) powders as potential solar absorber materialscitations
- 2018Surface-Breaking Flaw Detection in Mild Steel Welds using Quantum Well Hall Effect Sensor Devices
- 2018A Comparative Study of Electromagnetic NDE Methods and Quantum Well Hall Effect Sensor Imaging for Surface-Flaw Detection in Mild Steel Welds
- 2018An Automated Two-Dimensional Magnetic Field Scanner based on Quantum Well Hall Effect Sensor for Non-Destructive Testing
- 2017A real time quantum well hall effect 2D handheld magnetovision system for ferromagnetic and non-ferromagnetic materials non-destructive testing
- 2017A Real Time High Sensitivity High Spatial Resolution Quantum Well Hall Effect Magnetovision Cameracitations
- 2016Non-destructive detection of defects in materials by a hand-held QWHE magnetic scanner
- 2016A quantum well hall effect sensor based handheld magnetic scanner with programmable electromagnetic coil for non-destructive testing of ferromagnetic and non-ferromagnetic materials
- 2016Software and digital signal processing algorithms for a novel quantum well hall effect (QWHE) transducer based magnetic field camera
- 2014Thermally stable In0.7Ga0.3As/In 0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallizationcitations
- 2014Thermally stable In0.7Ga0.3As/In 0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallizationcitations
- 2014Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices
- 2013Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors
- 2012THz generation and detection using ultrafast, high resistivity III-V semiconductor photoconductors at 1.55 Km pulse excitation
- 2012Arsenide-based terahertz materials and devices for 800 and 1550 nm excitations
- 2010Elimination of current blocking in ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar transistorscitations
- 2009Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thicknesscitations
- 2007Defect investigation of stacked self-assembled InAs/GaAs quantum dot laserscitations
- 2006Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers
- 2006Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structurecitations
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article
Elimination of current blocking in ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar transistors
Abstract
Molecular beam epitaxy-grown wafers are used to fabricate all ternary I0.52Al0.48As-In0.53Ga0.47As-In 0.52Al0.48As double heterojunction bipolar transistors (DHBTs) with knee voltages of less than 1 V, showing no current blocking characteristic even at current densities of 200 kA/cm2. A set of wafers with a judicious combination of doping interface dipoles and composite collector designs were grown, and devices with a wide range of emitter areas from 20 × 20 down to 1 × 5 μ2 were fabricated to investigate the effects of the different epitaxial and geometrical design tradeoffs that culminated in an optimum design that is able to achieve high breakdown and high current gain without introducing current blocking. Despite the use of a heavy dipole doping of 4 × 1018 cm-3, a breakdown voltage BVCEO of 5.8 V at 0.2 kA/cm2 is achieved at room temperature. We believe this to be the first demonstration of an all-ternary large band gap InAlAs-InGaAs-InAlAs DHBTs with no current blocking up to a high current density of 200 kA/cm2. These new DHBTs that use only ternary alloys may lead to simplified device growth and fabrication options and give deeper understanding of the design tradeoffs in these structures. © 2006 IEEE.