• Unalan, H. E.
• Milne, W. I.
• Hsieh, G.-W.
• Li, F. M.
• Newton, Marcus
• Amaratunga, G.
• Robinson, I.
• Warburton, P. A.
• Beecher, P.
• Flewitt, A. J.
• Hiralal, P.
• Dalal, Sharvari
• Stott, J. E.
• Nathan, A.

Abstract

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2 V-1s-1, representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs

Topics

• Deposition
• nanocomposite
• dispersion
• compound
• polymer
• phase
• mobility
• thin film
• zinc
• semiconductor
• ester