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article
Conduction mechanisms and breakdown characteristics of Al2O 3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitors
Abstract
<p>This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO<sub>2</sub>/Al<sub>2</sub>O <sub>3</sub>/ZrO<sub>2</sub> film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.</p>