| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Emadi, Fahimeh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliabilitycitations
- 2024Contact Metallization Design for Low-Temperature Interconnects in MEMS Integrationcitations
- 2023Co, In, and Co–In alloyed Cu6Sn5 interconnects: Microstructural and mechanical characteristicscitations
- 2022Investigation of the microstructural evolution and detachment of Co in contact with Cu–Sn electroplated silicon chips during solid-liquid interdiffusion bondingcitations
- 2022Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packagingcitations
- 2021Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substratescitations
Places of action
| Organizations | Location | People |
|---|
article
Novel low-temperature interconnects for 2.5/3D MEMS integration: demonstration and reliability
Abstract
To meet the essential demands for high-performancemicroelectromechanical system (MEMS) integration, this study developed anovel CuSn-based solid-liquid interdiffusion (SLID) interconnectsolution. The study utilized a metallization stack incorporating a Colayer to interact with low-temperature Cu-Sn-In SLID. Since Cu <sub>6</sub> (Sn,In) <sub>5</sub>forms at a lower temperature than other phases in the Cu-Sn-In SLID system, the goal was to produce single-phase (Cu,Co) <sub>6</sub> (Sn,In) <sub>5</sub>interconnects. Bonding conditions were established for the Cu-Sn-In/Cosystem and the Cu-Sn/Co system as a reference. Thorough assessments oftheir thermomechanical reliability were conducted throughhigh-temperature storage (HTS), thermal shock (TS), and tensile tests.The Cu-Sn-In/Co system emerged as a reliable low-temperature solutionwith the following key attributes: 1) a reduced bonding temperature of200 °C compared to the nearly 300 °C required for Cu-Sn SLIDinterconnects to achieve stable phases in the interconnect bondline 2)the absence of the Cu3Sn phase and resulting void-free interconnects,and 3) high thermomechanical reliability with tensile strengthsexceeding the minimum requirements outlined in MIL-STD-883 method2027.2, particularly following the HTS test at 150 °C for 1000 h.