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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kristensen, Peter Kjær
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Metal-organic framework-intercalated graphene oxide nanofiltration membranes for enhanced treatment of wastewater effluentscitations
- 2024Metal-organic framework-intercalated graphene oxide nanofiltration membranes for enhanced treatment of wastewater effluentscitations
- 2023Magnetron Sputter Deposition of Nanostructured AlN Thin Filmscitations
- 2022Interfacial adhesion strength of III-N heterostructurescitations
- 2018Thermo-mechanically induced texture evolution and micro-structural change of aluminum metallizationcitations
- 2018Comparative study of Al metallization degradation in power diodes under passive and active thermal cyclingcitations
- 2018Optical characterization of SiC films grown on Si(111)
- 2018Optical characterization of SiC films grown on Si(111)
- 2018Low temperature transient liquid phase bonded Cu-Sn-Mo and Cu-Sn-Ag-Mo interconnectscitations
- 2016Mechanisms of metallization degradation in high power diodescitations
- 2015Effects of thermal cycling on aluminum metallization of power diodescitations
- 2015Nonfouling tunable βCD dextran polymer films for protein applicationscitations
- 2014Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubescitations
- 2013Influence of Two Compatibilizers on Clay/PP Nanocomposites Propertiescitations
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article
Comparative study of Al metallization degradation in power diodes under passive and active thermal cycling
Abstract
Degradation of Al metallization on Si-based semiconductor<br/>chips under operation is a reliability problem known<br/>for many years but the mechanisms of this phenomenon are not<br/>fully understood. To quantify contributions of different possible<br/>effects, a passive thermal cycling setup has been developed<br/>allowing for accelerated tests by varying the device temperature<br/>on a short time scale without applying electrical power. The<br/>setup is also capable of testing devices in different atmospheres.<br/>The results obtained by the thermal tests of diode chips are<br/>compared to those from power cycled diodes with focus on<br/>degradation of the top metallization layer. The data on structural<br/>and electrical characterization of the samples show that the<br/>passive thermal cycling induces metallization degradation very<br/>similar to that found for the power cycled devices. Thus, it can be<br/>concluded that the thermal-induced stresses are the dominating<br/>mechanisms for the metallization fatigue and following failure.<br/>The role of oxidation and corrosion effects is also studied<br/>in the experiments on passive thermal cycling using different<br/>environmental conditions. It is suggested that the formation<br/>of self-passivating aluminum oxide under ordinary atmospheric<br/>conditions can play a positive role in limiting the structural, and<br/>electrical degradation of the metallization layers. The obtained<br/>results represent a considerable contribution into understanding<br/>of major failure mechanisms related to metallization fatigue and<br/>reconstruction.