Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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Zhou, H.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (11/11 displayed)

  • 2023Quantitative mineralogy, mineral chemistry and microtex-tural data on the UG2 chromitite intruded by iron-rich ul-tramafic pegmatite (IRUP) at the Thaba Mine, northwest-ern Bushveld Complex, South Africacitations
  • 2019Life Prediction of Phosphor Bronze Reinforcing Tape Used in Underground Power Cables5citations
  • 2017Enhanced photoelectrochemical behavior of H-TiO2 nanorods hydrogenated by controlled and local rapid thermal annealing19citations
  • 2014Bipolar porous polymeric frameworks for low-cost, high-power, long-life all-organic energy storage devices74citations
  • 2013Evaluation of fracture mechanics parameters for bimaterial compact tension specimens7citations
  • 2013Aromatic porous-honeycomb electrodes for a sodium-organic energy storage device352citations
  • 2012Bone Material Properties in Premenopausal Women With Idiopathic Osteoporosis82citations
  • 2012An energy storage principle using bipolar porous polymeric frameworks206citations
  • 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)citations
  • 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metricscitations
  • 2007Bone quality in mild primary hyperparathyroidismcitations

Places of action

Chart of shared publication
Appelt, O.
1 / 3 shared
Tjallingii, R.
1 / 1 shared
Bachmann, K.
1 / 1 shared
Trumbull, R.
1 / 1 shared
Foresta, M.
1 / 2 shared
Weston, D.
1 / 2 shared
Pan, J.
1 / 6 shared
Li, F.
1 / 15 shared
Le Blanc, M.
1 / 2 shared
Gnanasambandam, S.
1 / 2 shared
Gurram, S. K.
1 / 1 shared
Estrade, S.
1 / 4 shared
Bräuer, G.
1 / 42 shared
Lopez-Conesa, L.
1 / 3 shared
Fan, Z.
1 / 32 shared
Lin, Y.
1 / 24 shared
Peiro, F.
1 / 7 shared
Wang, X.
1 / 79 shared
Schäfer, L.
1 / 6 shared
Waag, A.
1 / 5 shared
Yu, F.
1 / 4 shared
Shen, H.
1 / 1 shared
Nickerl, G.
3 / 4 shared
Kaskel, S.
3 / 24 shared
Eckert, Jürgen
3 / 1035 shared
Hosono, E.
3 / 3 shared
Sakaushi, K.
3 / 8 shared
Davies, C. M.
1 / 17 shared
Nikbin, K. M.
1 / 18 shared
Mehmanparast, Ali
1 / 79 shared
Gemming, T.
1 / 91 shared
Nickolas, T. L.
1 / 2 shared
Misof, B. M.
1 / 17 shared
Mcmahon, D.
1 / 1 shared
Lappe, J.
1 / 2 shared
Recker, R.
1 / 5 shared
Rogers, H. F.
1 / 1 shared
Cohen, A.
1 / 3 shared
Gamsjaeger, S.
1 / 5 shared
Shane, E.
2 / 7 shared
Dempster, D.
1 / 4 shared
Stein, E.
1 / 3 shared
Klaushofer, K.
2 / 106 shared
Paschalis, E. P.
1 / 26 shared
Fratzl, Prof. Dr. Dr. H. C. Peter
2 / 569 shared
Hofstetter, B.
1 / 2 shared
Roschger, P.
2 / 127 shared
Nishio-Hamane, D.
1 / 1 shared
Wisser, F. M.
1 / 5 shared
Abrokwah, J. K.
1 / 1 shared
Hill, R. H.
1 / 1 shared
Zurcher, P.
1 / 1 shared
Moran, David
2 / 7 shared
Li, Xu
2 / 10 shared
Passlack, M.
1 / 1 shared
Rajagopalan, K.
1 / 1 shared
Thayne, I. G.
2 / 2 shared
Hill, R. J. W.
1 / 1 shared
Asenov, A.
1 / 2 shared
Thoms, S.
1 / 2 shared
Macintyre, D. S.
1 / 1 shared
Bilezikian, J. P.
1 / 5 shared
Dempster, D. W.
1 / 6 shared
Zoehrer, R.
1 / 15 shared
Paschalis, E.
1 / 6 shared
Silverberg, S. J.
1 / 2 shared
Chart of publication period
2023
2019
2017
2014
2013
2012
2009
2008
2007

Co-Authors (by relevance)

  • Appelt, O.
  • Tjallingii, R.
  • Bachmann, K.
  • Trumbull, R.
  • Foresta, M.
  • Weston, D.
  • Pan, J.
  • Li, F.
  • Le Blanc, M.
  • Gnanasambandam, S.
  • Gurram, S. K.
  • Estrade, S.
  • Bräuer, G.
  • Lopez-Conesa, L.
  • Fan, Z.
  • Lin, Y.
  • Peiro, F.
  • Wang, X.
  • Schäfer, L.
  • Waag, A.
  • Yu, F.
  • Shen, H.
  • Nickerl, G.
  • Kaskel, S.
  • Eckert, Jürgen
  • Hosono, E.
  • Sakaushi, K.
  • Davies, C. M.
  • Nikbin, K. M.
  • Mehmanparast, Ali
  • Gemming, T.
  • Nickolas, T. L.
  • Misof, B. M.
  • Mcmahon, D.
  • Lappe, J.
  • Recker, R.
  • Rogers, H. F.
  • Cohen, A.
  • Gamsjaeger, S.
  • Shane, E.
  • Dempster, D.
  • Stein, E.
  • Klaushofer, K.
  • Paschalis, E. P.
  • Fratzl, Prof. Dr. Dr. H. C. Peter
  • Hofstetter, B.
  • Roschger, P.
  • Nishio-Hamane, D.
  • Wisser, F. M.
  • Abrokwah, J. K.
  • Hill, R. H.
  • Zurcher, P.
  • Moran, David
  • Li, Xu
  • Passlack, M.
  • Rajagopalan, K.
  • Thayne, I. G.
  • Hill, R. J. W.
  • Asenov, A.
  • Thoms, S.
  • Macintyre, D. S.
  • Bilezikian, J. P.
  • Dempster, D. W.
  • Zoehrer, R.
  • Paschalis, E.
  • Silverberg, S. J.
OrganizationsLocationPeople

booksection

Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics

  • Hill, R. J. W.
  • Zhou, H.
  • Asenov, A.
  • Moran, David
  • Thoms, S.
  • Li, Xu
  • Macintyre, D. S.
  • Thayne, I. G.
Abstract

There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.

Topics
  • impedance spectroscopy
  • mobility
  • Silicon
  • III-V semiconductor