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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zhou, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Quantitative mineralogy, mineral chemistry and microtex-tural data on the UG2 chromitite intruded by iron-rich ul-tramafic pegmatite (IRUP) at the Thaba Mine, northwest-ern Bushveld Complex, South Africa
- 2019Life Prediction of Phosphor Bronze Reinforcing Tape Used in Underground Power Cablescitations
- 2017Enhanced photoelectrochemical behavior of H-TiO2 nanorods hydrogenated by controlled and local rapid thermal annealingcitations
- 2014Bipolar porous polymeric frameworks for low-cost, high-power, long-life all-organic energy storage devicescitations
- 2013Evaluation of fracture mechanics parameters for bimaterial compact tension specimenscitations
- 2013Aromatic porous-honeycomb electrodes for a sodium-organic energy storage devicecitations
- 2012Bone Material Properties in Premenopausal Women With Idiopathic Osteoporosiscitations
- 2012An energy storage principle using bipolar porous polymeric frameworkscitations
- 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
- 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
- 2007Bone quality in mild primary hyperparathyroidism
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booksection
Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
Abstract
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.