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| Naji, M. |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Moran, David
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2017Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing
- 2017High resolution structural characterisation of laser-induced defect clusters inside diamondcitations
- 2012Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps
- 2012Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stampscitations
- 2012Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamondcitations
- 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
- 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
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booksection
Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
Abstract
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.