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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Xu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Temperature evolution of the magnetic properties of Ag/Fe nanodot arrayscitations
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2020Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity siliconcitations
- 2020Polarity dependence in Cl 2 -based plasma etching of GaN, AlGaN and AlNcitations
- 2020Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity siliconcitations
- 2017Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing
- 2012Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps
- 2012Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stampscitations
- 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
- 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
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booksection
Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
Abstract
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.