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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sverdlov, Viktor
TU Wien
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2022Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach
- 2013strain induced reduction of surface roughness dominated spin relaxation in mosfetscitations
- 2012a multi scale modeling approach to non radiative multi phonon transitions at oxide defects in mos structurescitations
- 2011perspectives of silicon for future spintronic applications from the peculiarities of the subband structure in thin films
- 2009valley splitting in thin silicon films from a two band k p model
- 2009thickness dependence of the effective masses in a strained thin silicon filmcitations
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article
thickness dependence of the effective masses in a strained thin silicon film
Abstract
By comparing results obtained with the density- functional method, empirical pseudo-potential method, and empirical tight-binding method it is demonstrated that the conduction band structure is accurately described by the two- band k·p model. The later model is used to investigate the subband structure in ultra-thin (001) silicon films. It is demonstrated for the first time that the unprimed subbands with the same quantum number are not equivalent in ultra-thin films and develop different effective masses along (110) and (-110) directions. Using the two-band k·p model the dependence of the subband effective masses on strain and thickness is calculated. It is shown that the mass along tensile stress in (110) direction decreases with strain guaranteeing current enhancement in thin films. Shear strain also introduces large splitting between the unprimed subbands with the same n. Finally, the dependence of the effective masses in primed subbands is calculated and found to agree well with recent pseudopotential calculations.