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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tong, D. H.
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document
Simple technique for direct patterning of nanowires using a nanoslit shadow-mask
Abstract
Nanowires of vaious lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 micrometers have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm