| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Petersen, Dirch Hjorth
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (33/33 displayed)
- 2024Electron-vacancy scattering in SrNbO3 and SrTiO3
- 2024Deconvolution of heat sources for application in thermoelectric micro four-point probe measurementscitations
- 2023Octahedral distortions in SrNbO3citations
- 2022Review of Micro- and Nanoprobe Metrology for Direct Electrical Measurements on Product Waferscitations
- 2022Determination of thermoelectric properties from micro four-point probe measurementscitations
- 2021Effective electrical resistivity in a square array of oriented square inclusionscitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2017High temperature SU-8 pyrolysis for fabrication of carbon electrodescitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Pyrolytic carbon microelectrodes for impedance based cell sensingcitations
- 2015Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gatecitations
- 2014Electrical characterization of sputtered ZnO:Al films with microprobe technique
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
- 2012In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substratescitations
- 2012Activation and thermal stability of ultra-shallow B+-implants in Ge
- 2012Activation and thermal stability of ultra-shallow B + -implants in Gecitations
- 2012Effect of B + Flux on the electrical activation of ultra-shallow B + implants in Ge
- 2012Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Study of submelt laser induced junction nonuniformities using Therma-Probecitations
- 2008Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctionscitations
- 2008Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctionscitations
- 2008Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxycitations
- 2002Simulated SAM A-scans on multilayer MEMS components
Places of action
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document
Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions
Abstract
Sub-melt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process with minimal sheet resistance variation at a macroscopic and microscopic level, careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature and concentration dependent diffusion component.