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Uesugi, Katsuhiro
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document
Effect of [6,6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors
Abstract
The influence of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO2 gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility (μ = 0.95-2.2 cm2 V-1 s-1), low threshold voltages (Vth = -1.1 - -5.4 V), a high on/off current ratio (Ion/Ioff = 104), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.