| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Beattie, Neil
Northumbria University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2023A structural, optical and electrical comparison between physical vapour deposition and slot-die deposition of Al:ZnO (AZO)
- 2022Elimination of the carbon-rich layer in Cu2ZnSn(S, Se)4 absorbers prepared from nanoparticle inkscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Ex-situ Ge-doping of CZTS Nanocrystals and CZTSSe Solar Absorber Filmscitations
- 2022Exploring the Role of Temperature and Hole Transport Layer on the Ribbon Orientation and Efficiency of Sb2Se3 cells Deposited via Thermal Evaporation
- 2022Recovery mechanisms in aged kesterite solar cellscitations
- 2020Innovative fabrication of low-cost kesterite solar cells for distributed energy applications
- 2019Solution processing route to Na incorporation in CZTSSe nanoparticle ink solar cells on foil substratecitations
- 2018Temperature controlled properties of sub-micron thin SnS filmscitations
- 2018Temperature controlled properties of sub-micron thin SnS filmscitations
- 2018CZTSSe Solar Cells from Nanoparticle Inks
- 2017A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin filmscitations
- 2016Selenization kinetics inCu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inkscitations
- 2016Sodium Induced Microstructural Changes in MOCVD-Grown CdTe Thin Films
- 2016The role of nanoparticle inks in determining the performance of solution processed Cu2ZnSn(S,Se)4thin film solar cellscitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
Places of action
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document
Exploring the Role of Temperature and Hole Transport Layer on the Ribbon Orientation and Efficiency of Sb2Se3 cells Deposited via Thermal Evaporation
Abstract
Antimony selenide (Sb2Se3) has emerged as a promising candidate for next generation solar cell devices due to its non-toxicity, low cost, and earth abundance. Coupling these factors with its promising optoelectrical properties of its high absorption coefficient and almost ideal band gap for single-junction cells yields an incredibly attractive absorber material. Issues in the material come from poor carrier management, particularly in the mobility of photogenerated carriers within the absorber layer and through the immediate interfaces. The orientation of the (Sb4Se6)n ribbons grown via thermal evaporation was investigated by varying the deposition temperature and the post-annealing treatment. 300 °C as the deposition temperature was most conducive to promoting ribbon orientations which were perpendicular to the substrate. Annealing effects were shown to be able to induce crystallinity in films at a lower temperature than the deposition temperature as well as being able to influence orientation away from (hk0) orientations. Using these parameters, the effect of 15 nm thick NiOX and MoOX as Hole Transport Layer (HTL) materials deposited via electron-beam evaporation in antimony selenide solar cells is investigated in superstrate and substrate configurations. Notable improvements were found to the efficiency of the devices when NiOX was considered as the HTL, but a degradation occurred when fabricated with MoOX in superstrate configuration; substrate configuration was only viable with a NiOX HTL.