| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Corre, Alain Le
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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document
Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
Abstract
International audience; Determination of Seebeck coefficient is a practical technique to investigate the direct conversion of hot carrier energy to electric voltage. However, this study is challenging, especially in nanostructured materials using traditional measurements via heaters and electric contacts. Here, we investigate photo-induced Seebeck effects of InGaAs multi-quantum-well structure via a contact-less measurement (photoluminescence spectroscopy). We have determined thermodynamic properties of hot carriers via fitting the emitted photoluminescence spectra with the generalized Planck's law. We have observed a linear dependence between the gradient of carrier temperature and the quasi-Fermi level splitting of photo-generated hot carriers at various lattice temperatures, which is associated with thermoelectric effects in the system.