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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Esmaielpour, Hamidreza
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2023The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures
- 2023The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wellscitations
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
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document
Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
Abstract
International audience; Determination of Seebeck coefficient is a practical technique to investigate the direct conversion of hot carrier energy to electric voltage. However, this study is challenging, especially in nanostructured materials using traditional measurements via heaters and electric contacts. Here, we investigate photo-induced Seebeck effects of InGaAs multi-quantum-well structure via a contact-less measurement (photoluminescence spectroscopy). We have determined thermodynamic properties of hot carriers via fitting the emitted photoluminescence spectra with the generalized Planck's law. We have observed a linear dependence between the gradient of carrier temperature and the quasi-Fermi level splitting of photo-generated hot carriers at various lattice temperatures, which is associated with thermoelectric effects in the system.