| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Weeber, Arthur
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma
Places of action
| Organizations | Location | People |
|---|
document
On current collection from supporting layers in perovskite/c-Si tandem solar cells
Abstract
<p>The study of a two-terminal (2T) perovskite/c-Si tandem solar cell requires accurate and concurrent description of photons absorption and tunnelling-mediated charge transport. By analysing current collection across the device heterointerfaces, we investigated the effect of (i) perovskite thickness on the short-circuit current density (Jsc) of the tandem device and (ii) temperature on devices performance. We deployed an advanced opto-electrical modelling framework based on optical sub-models from GenPro4 and on self-consistent fundamental semiconductor equations implemented in TCAD Sentaurus. Using these simulations of perovskite/c-Si tandem solar cells, an in-depth analysis of the physics of current contribution of supporting layers has been carried out. Solving numerically the fundamental equations of semiconductors, we theoretically show for the first time that electron-hole pairs photo-generated in the TRJ can be collected, effectively boosting Jsc values well beyond (photocurrent density) Jph levels. In addition, a temperature-based study of these perovskite/c-Si tandem solar cells has been performed to evaluate the temperature coefficient which is useful for their energy yield simulations. </p>