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Walter, Daniel
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Publications (3/3 displayed)
- 2018The Interaction of Ion Migration with Shockley-Read-Hall Recombination in the Bulk of Perovskite Solar Cells Explains Anomalous Voltage and Luminescence Transientscitations
- 2018Implications of laser-doping parameters and contact opening size on contact resistivitycitations
- 2012Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imagingcitations
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document
Implications of laser-doping parameters and contact opening size on contact resistivity
Abstract
<p>Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρ<sub>C</sub>down to 70 μΩ cm<sup>2</sup>and 30 μΩ cm<sup>2</sup>for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations.</p>