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Lee, Benjamin G.
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Topics
Publications (7/7 displayed)
- 2018Design Criteria for Micro-Optical Tandem Luminescent Solar Concentratorscitations
- 2018Self Aligned Aluminum Selective Emitter for n-type Si Cells
- 2018Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures
- 2018Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint
- 2016Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cellscitations
- 2015Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cellscitations
- 2014Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxidescitations
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document
Self Aligned Aluminum Selective Emitter for n-type Si Cells
Abstract
We show a method for making a self-aligned selective emitter by annealing aluminum grid lines above the SiAl eutectic temperature, and study the recombination properties using lifetime measurements. The dark saturation current density at the metal contact (J 0,metal ) is determined as a function of minority carrier density using photoconductive decay. After annealing at 600 degrees C, J 0,metal decreases from 1800 fA cm -2 to 500 fA cm -2 at an injection level of 1E15 cm -3 . This value of J 0,metal would correspond to a very low emitter recombination contribution of ~10 - 25 fA cm -2 for a front metal grid with area coverage of 2 - 5%. In addition, J 0,metal is found to be injection dependent. A low contact resistivity of ~0.1 mOhm cm -2 is obtained from transmission line measurement (TLM).