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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oehler, Fabrice
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe 2 –Graphene Heterostructure via Photoemission Electron Microscopycitations
- 2024Stacking order and electronic band structure in MBE-grown trilayer WSe$_2$ filmscitations
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructurecitations
- 2023Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluridecitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2023Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor depositioncitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2016Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
- 2008Control of gold surface diffusion on Si nanowirescitations
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document
Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
Abstract
We present a new method to determine the doping level of n-type semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift and the broadening of luminescence spectra are a signature of an increased density of electrons. They are compared to CL spectra of well-calibrated planar Si-doped GaAs layers whose doping levels are determined by Hall measurements and compared to previous experimental studies. We infer a n-type doping of $1 10^{18}{cm}^{-3}$ to $2 10^{18}{cm}^{-3}$ with a high spatial homogeneity along the nanowire. These results show that cathodoluminescence provides an alternative way to probe carrier concentration in nanostructured and polycrystalline semiconductors, and to map the spatial inhomogeneity of dopants.