| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Collin, Stéphane
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescencecitations
- 2023Humidity‐Induced Degradation Processes of Halide Perovskites Unveiled by Correlative Analytical Electron Microscopycitations
- 2021Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescencecitations
- 2020Erbium-doped oxide for optical gain on hybrid silicon photonics platforms (Student Paper)
- 2020Backside light management of 4-terminal bifacial perovskite/silicon tandem PV modules evaluated under realistic conditionscitations
- 2019Development of reflective back contacts for high-efficiency ultrathin Cu(In,Ga)Se2 solar cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2016Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trappingcitations
- 2015Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2013Metal–dielectric bi-atomic structure for angular-tolerant spectral filteringcitations
- 20123D modeling of metamaterials at oblique incidence and effective analysis
- 20123D modeling of metamaterials at oblique incidence and effective analysis
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
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document
Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
Abstract
We present a new method to determine the doping level of n-type semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift and the broadening of luminescence spectra are a signature of an increased density of electrons. They are compared to CL spectra of well-calibrated planar Si-doped GaAs layers whose doping levels are determined by Hall measurements and compared to previous experimental studies. We infer a n-type doping of $1 10^{18}{cm}^{-3}$ to $2 10^{18}{cm}^{-3}$ with a high spatial homogeneity along the nanowire. These results show that cathodoluminescence provides an alternative way to probe carrier concentration in nanostructured and polycrystalline semiconductors, and to map the spatial inhomogeneity of dopants.