| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lee, Benjamin G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2018Design Criteria for Micro-Optical Tandem Luminescent Solar Concentratorscitations
- 2018Self Aligned Aluminum Selective Emitter for n-type Si Cells
- 2018Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures
- 2018Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint
- 2016Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cellscitations
- 2015Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cellscitations
- 2014Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxidescitations
Places of action
| Organizations | Location | People |
|---|
document
Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures
Abstract
We present a robust, simple technique for dopant patterning onto poly-Si/SiO 2 passivated tunneling contacts on nCz wafers. Heavily doped, thin nand ptype a-Si:H overlayers serve as solid-state dopant sources for blanket intrinsic a-Si:H layer on tunneling SiO 2 . Subsequent processing results in uniformly doped, functional n- and p-type passivated contacts. Furthermore, physical masking during the PECVD of the dopant source overlayers enables an interdigitated back contact (IBC) cell structure with sufficient doped finger edge fidelity to preserve an intrinsic electrode gap. Lithography-free, passivated contact IBC cell structures are made using a set of n-, p-, and metallization masks from patterned Si wafers with mechanical alignment. Alternatively, doped a-Si:H overlayers are patterned by dielectric layer deposition and lithography.