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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lai, Barry
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Scanning x-ray excited optical luminescence of heterogeneity in halide perovskite alloyscitations
- 2023Synergistic Role of Water and Oxygen Leads to Degradation in Formamidinium-Based Halide Perovskites
- 2023Synergistic Role of Water and Oxygen Leads to Degradation in Formamidinium-Based Halide Perovskitescitations
- 2021Role of Cation Ordering on Device Performance in (Ag,Cu)InSe$_{2}$ Solar Cells with KF Post-Deposition Treatmentcitations
- 2021Synchrotron X-ray metrology of dopant distribution and oxidation state in high pressure CVD grown TM 2+ :ZnSe optical fiberscitations
- 2020Moisture-Induced Crystallographic Reorientations and Effects on Charge Carrier Extraction in Metal Halide Perovskite Solar Cellscitations
- 2018Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cellscitations
- 2018Moving Beyond p-Type mc-Sicitations
- 2018Solubility and Diffusivitycitations
- 2018Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Siliconcitations
- 2017Toward Effective Gettering in Boron-Implanted Silicon Solar Cellscitations
- 2016High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defectscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2013Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusioncitations
- 2011Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cellscitations
- 2010Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cellscitations
- 2010The Maia X-ray detector array at the Australian Synchrotron: High definition SXRF trace element imaging
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document
Toward Effective Gettering in Boron-Implanted Silicon Solar Cells
Abstract
<p>Boron-implantation is a pathway to high-quality, low-cost emitters required to the industry standard BBr3 diffusion, B-implant requires no edge isolation or boron rich layer (BRL) removal, which reduces manufacturing complexity and cost. B-implant also offers easy control of the dopant profile, which can translate to lower emitter saturation current density (j(0e)) and thus higher cell efficiencies. In addition to low emitter saturation current density, an important property of the emitter is its gettering efficiency, or its ability to reduce recombination active bulk defects that degrade bulk minority charge carrier diffusion length. Here, we perform a controlled experiment to map the potential of high-quality (j(0e) <50 fA/cm(2)) B-implanted emitters to reduce bulk iron point defects. We show that the point defect concentration can be reduced by more than 99.9 %. We describe efforts to generalize our results and elucidate the underlying gettering mechanisms via predictive modeling.</p>