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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morral, Anna Fontcuberta I.
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Publications (4/4 displayed)
- 2019Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductorcitations
- 2018High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowirescitations
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2017Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowirescitations
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document
Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells
Abstract
We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.