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| Azevedo, Nuno Monteiro |
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Bertoni, Mariana
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Publications (6/6 displayed)
- 2020Modeling Time to Failure in Potential-Induced Degradation of Silicon Solar Modules based on Quantitative Sodium Kinetics
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2016Finite- vs. infinite-source emitters in silicon photovoltaicscitations
- 2013Improved iron gettering of contaminated multicrystalline silicon by high temperature phosphorus diffusioncitations
- 2011Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cellscitations
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document
Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells
Abstract
We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.