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Lee, Benjamin G.
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Publications (7/7 displayed)
- 2018Design Criteria for Micro-Optical Tandem Luminescent Solar Concentratorscitations
- 2018Self Aligned Aluminum Selective Emitter for n-type Si Cells
- 2018Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures
- 2018Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint
- 2016Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cellscitations
- 2015Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cellscitations
- 2014Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxidescitations
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document
Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells
Abstract
Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.