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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ozanne, F.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2016understanding the role of mobility of ito films for silicon heterojunction solar cell applicationscitations
- 2013strategies of cost reduction and high performance on a si h c si heterojunction solar cells 21 efficiency on monolike substratecitations
- 2012key aspects on development of high efficiency heterojunction and ibc heterojunction solar cells towards 22 efficiency on industrial size
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article
strategies of cost reduction and high performance on a si h c si heterojunction solar cells 21 efficiency on monolike substrate
Abstract
In the actual PV context, it is mandatory to address cost reduction maintaining very high efficiency to be competitive. In the case of amorphous/crystalline heterojunction technology (HET), cost pareto is driven by Silver consumption by screen printing pastes followed by Silicon substrate. One option is to substitute Silver by Cu plating. Regarding material costs, monocrystalline (i.e, Czochralski (Cz) or Float-Zone (FZ)) silicon wafers might be also replaced by the so-called monolike or quasi-mono silicon in order to reduce the cost of the required high quality substrates In this paper, we show the latest results integrating both options on HET solar cell developments. Monolike processes have been optimized to reach excellent bulk quality, leading to effective carrier lifetimes over 1ms and implied open circuit voltage over 720mV comparable to Cz silicon. The combination with a Cu-plating metallization on an optimized structure, INES has reached over 21% efficiency on large area devices.