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Reichertz, Lothar A.
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document
Development of ZnTe1-xOx intermediate band solar cells
Abstract
We describe the fabrication of ZnTe<sub>1-x</sub>O<sub>x</sub> intermediate band solar cell (IBSC) using the combination of oxygen ion implantation and pulsed laser melting. Also, we report the first demonstration of homojunction ZnTe solar cells in which n-ZnTe layer is fabricated by thermal diffusion of Al into p-ZnTe. The preliminary results of the ZnTe<sub>1-x</sub>O<sub>x</sub> IBSC are compared with the ZnTe cell. The homojunction ZnTe solar cells exhibited photovoltaic activity with an open circuit voltage of approximately 0.9 V and a maximum short circuit current (J<sub>SC</sub>) of 1.75 mA/cm<sup>2</sup>. J <sub>SC</sub> was found to depend strongly on the location of pn-junction, with shallower pn-junction depth, corresponding to higher J<sub>SC</sub>. Photo-modulated reflectance spectra of ZnTe<sub>1-x</sub>O<sub>x</sub>, show two optical transitions from the valence band to the conduction subband E <sup>+</sup> (∼2.5 eV) and from the valence band to the intermediate band E<sup>-</sup> (∼1.7 eV). The external quantum efficiency of ZnTe <sub>1-x</sub>O<sub>x</sub> solar cell clearly shows PV responses due to the transition from valence band to the two conduction subbands (E<sup>-</sup> and E<sup>+</sup>) demonstrating the photovoltaic action through the intermediate band in this highly mismatched alloy. © 2010 IEEE.