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Ager, J. W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012Embedded binary eutectic alloy nanostructurescitations
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applicationscitations
- 2008Band gap bowing parameter of In1-x Alx Ncitations
- 2008High efficiency InAlN-based solar cellscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2002Band anticrossing in highly mismatched group II-VI semiconductor alloys
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
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document
High efficiency InAlN-based solar cells
Abstract
The band gap energies of the In<sub>1-x</sub>Al<sub>x</sub>N alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap bowing parameter of 4.8 ± 0.5 eV is found for the alloy system. With this number, the alloy compositions for two and three junction tandem cells with maximum theoretical power conversion efficiencies can be determined. Two junction InAlN / Si solar cells are also promising structures for high efficiency solar cells, due to the properties of the interface between n-type InAlN and p-type Si, as well as the band gaps of the respective materials. The theoretical efficiency (detailed balance) for the In<sub>0.60</sub>Al<sub>0.40</sub>N / Si tandem cell is 41%. © 2008 IEEE.