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Ager, J. W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012Embedded binary eutectic alloy nanostructurescitations
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applicationscitations
- 2008Band gap bowing parameter of In1-x Alx Ncitations
- 2008High efficiency InAlN-based solar cellscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2002Band anticrossing in highly mismatched group II-VI semiconductor alloys
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
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document
Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications
Abstract
In<sub>x</sub>Ga<sub>1-x</sub>N and In<sub>x</sub>Al<sub>1-x</sub>N alloys are grown via MBE on sapphire substrates. A hole concentration of 7.7×10<sup>17</sup> cm<sup>-3</sup> is achieved on Mg-doped In <sub>0.04</sub>Ga<sub>0.96</sub>N. When x≫0.11, the Hall samples exhibit strong n-type polarity, whereas p-type polarity is confirmed by hot probe measurement for all Mg-doped InGaN and InAlN samples. Single p-i-n junction solar cells made of the same In<sub>x</sub>Ga<sub>1-x</sub>N alloy composition are developed. Upon illumination by a 325 nm laser, V<sub>oc</sub> is measured at 2.5 V with a fill factor of 61% for all-GaN cell. Clear photo-responses are also observed in InGaN cells with 0.2 and 0.3 Indium content when illuminated by focused outdoor sunlight. © 2008 IEEE.