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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Raniero, Leandro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputteringcitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2007Amorphous/nanocrystalline silicon biosensor for the specific identification of unamplified nucleic acid sequences using gold nanoparticle probescitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2006Characterization of nanocrystalline silicon carbide filmscitations
- 2006Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopycitations
- 2006Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cellscitations
- 2005Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHzcitations
- 2005Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.citations
- 2004Characterization of silicon carbide thin films prepared by VHF-PECVD technologycitations
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document
Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.
Abstract
This work deals with the study of the role of the buffer layers thickness on the TCO/p-a-SiC:H/buffer(1)/buffer(2)/i-(nc-Si/a-Si:H)/n-a-Si:H/Al solar cell I-V and impedance performances. The aim was to improve the p/i interface region, which has a large influence on the solar cell characteristics and stability. In order to match the difference between the p and i layers optical gaps, the buffer layers were deposited using, for each layer, different methane to silane mixtures, aiming to obtain a gradual match of the corresponding optical gaps. The intrinsic layer was deposited at high hydrogen dilution rates at 27.12 MHz in conditions that allowed the incorporation of nanoparticles/nanoclusters. Solar cells with fill factor of 0.63; open circuit voltage of 0.93 Volts; short circuit current density of 16.13 mA/cm(2) and an efficiency of 9.4% were produced with buffer layers around 1.3 nm thick. When comparing these solar cells with conventional amorphous silicon solar cells we notice that the quantum efficiency from ultraviolet to green regions is improved up to 13%, in average. Concerning solar cell capacitance, the data show that the best solar cells exhibit the highest capacitance, meaning that the films are compact and dense, in-line with the other electrical characteristics obtained.