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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Garg, R.
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Publications (4/4 displayed)
- 2017Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure
- 2014A review of non linear piezoelectricity in semiconductorscitations
- 2013Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductorscitations
- 2012Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
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document
Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
Abstract
We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant. © 2012 IEEE.