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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Migliorato, Max A.
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2014A review of non linear piezoelectricity in semiconductorscitations
- 2013Non-linear piezoelectricity in wurtzite ZnO semiconductorscitations
- 2013Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductorscitations
- 2012Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
- 2012Importance of non linear piezoelectric effect inWurtzite III-N semiconductorscitations
- 2011Second-order piezoelectricity in wurtzite III-N semiconductorscitations
- 2011Erratum:Second-order piezoelectricity in wurtzite III-N semiconductors (Physical Review B (2011) 84 (085211))citations
- 2011Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
- 2007Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductorscitations
- 2004Influence of composition on the piezoelectric effect and on the conduction band energy levels of inxGa1-xAs/GaAs quantum dotscitations
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document
Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
Abstract
We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced © 2011 IEEE.