693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mikolajick, Thomas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (92/92 displayed)
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂citations
- 2024Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>citations
- 2024High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Densitycitations
- 2023Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2citations
- 2023Engineering of HZO layer for the fabrication of ultimate 3D vertical transistors for Memory-in-Logic applications M. Materials engineering for advanced semiconductor devices
- 2023Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Filmscitations
- 2023From Ferroelectric Material Optimization to Neuromorphic Devicescitations
- 2023Influence of the ozone dose time during atomic layer deposition on the ferroelectric and pyroelectric properties of 45 nm-thick ZrO 2 filmscitations
- 2023Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodescitations
- 2023Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano-Scale Schottky Barrierscitations
- 2023Toward Nonvolatile Spin-Orbit Devicescitations
- 2022Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.citations
- 2022Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
- 2022An Analog Memristive and Memcapacitive Device for Neuromorphic Computingcitations
- 2022Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Filmscitations
- 2022Graph Coloring via Locally-Active Memristor Oscillatory Networkscitations
- 2022Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxidecitations
- 2022In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoridecitations
- 2022MOx in ferroelectric memories
- 2022Assessment of Back-End-of-Line Compatibility of Sputtered HfO2-Based Ferroelectricscitations
- 2022Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Filmscitations
- 2022Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf 0.5 Zr 0.5 O 2 /TiN ferroelectric capacitors studied by x-ray photoemission electron microscopycitations
- 2022Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibilitycitations
- 2022Raman Spectroscopy as a Key Method to Distinguish the Ferroelectric Orthorhombic Phase in Thin ZrO2-Based Filmscitations
- 2021Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stackscitations
- 2021Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealingcitations
- 2021Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriescitations
- 2021Chemical Stability of IrO$_{2}$ Top Electrodes in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gascitations
- 2021Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and Vth Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTscitations
- 2021Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO$_2$ filmscitations
- 2020Magnetic and ferroelectric memoriescitations
- 2020Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructurescitations
- 2020Enhanced ferroelectric polarization in TiN/HfO2/TiN capacitors by interface designcitations
- 2020Influence of oxygen content on the structure and reliability of ferroelectric HfxZr1−xO2 layerscitations
- 2020Enhanced Ferroelectric Polarization in TiN/HfO$_{2}$/TiN Capacitors by Interface Designcitations
- 2019Local structural investigation of hafnia-zirconia polymorphs in powders and thin films by X-ray absorption spectroscopycitations
- 2019Multi-staged deposition of trench-gate oxides for power MOSFETscitations
- 2019Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effectcitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconiumcitations
- 2019Ferroelectric field effect transistorcitations
- 2019Recent progress for obtaining the ferroelectric phase in hafnium oxide based filmscitations
- 2019Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cellcitations
- 2019Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cellcitations
- 2018Review and perspective on ferroelectric HfO₂-based thin films for memory applicationscitations
- 2018Effect of Annealing Ferroelectric HfO₂ Thin Films: In Situ, High Temperature X-Ray Diffractioncitations
- 2018Origin of Temperature-Dependent Ferroelectricity in SiDoped HfO₂citations
- 2018Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensorscitations
- 2018Hafnium oxide based ferroelectric devices for memories and beyondcitations
- 2018Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistorscitations
- 2018Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂citations
- 2018Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO₂: a first principles studycitations
- 2017Human alpha-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor
- 2017In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETscitations
- 2016Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logiccitations
- 2016Compact Nanowire Sensors Probe Microdropletscitations
- 2016An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functionscitations
- 2016Sulphur sensitive galvanic cells for the float glass process
- 2015Flexible Electronics: Light Weight and Flexible High-Performance Diagnostic Platform (Adv. Healthcare Mater. 10/2015)citations
- 2015Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowirescitations
- 2015Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applicationscitations
- 2015Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistorscitations
- 2015Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal-insulator-metal stackscitations
- 2015Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement
- 2015Via hole conditioning in silicon heterojunction metal wrap through solar cells
- 2014Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristorscitations
- 2014Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environmentcitations
- 2014Conduction mechanisms and breakdown characteristics of Al2O 3-doped ZrO2 high-k dielectrics for three-dimensional stacked metal-insulator-metal capacitorscitations
- 2014Near surface inversion layer recombination in Al2O3 passivated n -type siliconcitations
- 2014Atomic layer deposited high-κ nanolaminates for silicon surface passivationcitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2013Millisecond flash lamp annealing for LaLuO3 and LaScO 3 high-k dielectricscitations
- 2013Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current outputcitations
- 2013Channel length dependent sensor response of Schottky-barrier FET pH sensorscitations
- 2013Sponge-like Si-SiO2 nanocomposite - Morphology studies of spinodally decomposed silicon-rich oxidecitations
- 2013Structural and dielectric properties of sputtered SrxZr (1-x)Oycitations
- 2013Silicon nanowires - a versatile technology platformcitations
- 2012Thermally activated crystallization of Nb 2O 5 grown on Pt electrodecitations
- 2012Incipient ferroelectricity in Al-doped HfO2 thin filmscitations
- 2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structurescitations
- 2011Applicability of molecular beam deposition for the growth of high-k oxidescitations
- 2011Optical characterization of three-dimensional structures within a DRAM capacitor
- 2011Control of rectifying and resistive switching behavior in BiFeO3 thin filmscitations
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
- 2011Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applicationscitations
- 2011Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistorcitations
- 2010Nanocrystalline materials - Optimization of thin film properties
- 2003SrBi2Ta2O9 ferroelectric thin film capacitorscitations
- 2003Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin filmscitations
- 2002Influence of deposition conditions on Ir/IrO 2 oxygen barrier effectivenesscitations
- 2002Platinum contamination issues in ferroelectric memoriescitations
- 2001Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decompositioncitations
- 2001An overview of FeRAM technology for high density applications
Places of action
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document
Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility
Abstract
<p>In this work, we investigate the back-end-of-line (BEOL) compatibility of the TiN/Hf1-xZrxO2 (HZO)/TiN thin-film capacitors by exploiting the effect of sputtering power, ZrO2 content and process pressure. The variation of double remanent polarization (2Pr) suggests a crystal phase transformation in the HZO film when the sputtering power is altered. A change in the dielectric constant also supports this behavior. After tuning the process pressure, we could lower the required thermal budget for crystallization to 400°C, which is thermally compatible with BEOL processes. Moreover, the optimal sputtering parameters could reach 2Pr of 36 μC/cm2 with an endurance of up to 107 cycles. High 2Pr and good endurance achieved with low-Temperature annealing is a breakthrough for sputtered HfO2-based thin films and shows a promising future for integrating sputtered HZO into BEOL processes.</p>