Materials Map

Discover the materials research landscape. Find experts, partners, networks.

  • About
  • Privacy Policy
  • Legal Notice
  • Contact

The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

×

Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

To Graph

1.080 Topics available

To Map

977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

←

Page 1 of 27758

→
←

Page 1 of 0

→
PeopleLocationsStatistics
Naji, M.
  • 2
  • 13
  • 3
  • 2025
Motta, Antonella
  • 8
  • 52
  • 159
  • 2025
Aletan, Dirar
  • 1
  • 1
  • 0
  • 2025
Mohamed, Tarek
  • 1
  • 7
  • 2
  • 2025
Ertürk, Emre
  • 2
  • 3
  • 0
  • 2025
Taccardi, Nicola
  • 9
  • 81
  • 75
  • 2025
Kononenko, Denys
  • 1
  • 8
  • 2
  • 2025
Petrov, R. H.Madrid
  • 46
  • 125
  • 1k
  • 2025
Alshaaer, MazenBrussels
  • 17
  • 31
  • 172
  • 2025
Bih, L.
  • 15
  • 44
  • 145
  • 2025
Casati, R.
  • 31
  • 86
  • 661
  • 2025
Muller, Hermance
  • 1
  • 11
  • 0
  • 2025
Kočí, JanPrague
  • 28
  • 34
  • 209
  • 2025
Šuljagić, Marija
  • 10
  • 33
  • 43
  • 2025
Kalteremidou, Kalliopi-ArtemiBrussels
  • 14
  • 22
  • 158
  • 2025
Azam, Siraj
  • 1
  • 3
  • 2
  • 2025
Ospanova, Alyiya
  • 1
  • 6
  • 0
  • 2025
Blanpain, Bart
  • 568
  • 653
  • 13k
  • 2025
Ali, M. A.
  • 7
  • 75
  • 187
  • 2025
Popa, V.
  • 5
  • 12
  • 45
  • 2025
Rančić, M.
  • 2
  • 13
  • 0
  • 2025
Ollier, Nadège
  • 28
  • 75
  • 239
  • 2025
Azevedo, Nuno Monteiro
  • 4
  • 8
  • 25
  • 2025
Landes, Michael
  • 1
  • 9
  • 2
  • 2025
Rignanese, Gian-Marco
  • 15
  • 98
  • 805
  • 2025

Zou, J.

  • Google
  • 17
  • 44
  • 816

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (17/17 displayed)

  • 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Melting16citations
  • 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powderscitations
  • 2016III-V compound semiconductor nanowires for optoelectronic device applications1citations
  • 2011III-V compound semiconductor nanowires for optoelectronic device applications1citations
  • 2009III-V compound semiconductor nanowires3citations
  • 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devicescitations
  • 2004Dynamic annealing in III-nitrides under ion bombardment54citations
  • 2004Lattice damage produced in GaN by swift heavy ions83citations
  • 2003Ion-beam-produced structural defects in ZnO254citations
  • 2002Ion-beam-produced damage and its stability in AlN films64citations
  • 2001Effect of ion species on the accumulation of ion-beam damage in GaNcitations
  • 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN39citations
  • 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures32citations
  • 2000Ion-beam-induced porosity of GaN69citations
  • 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment15citations
  • 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon10citations
  • 2000Damage buildup in GaN under ion bombardment175citations

Places of action

Chart of shared publication
Leo, J. R. O.
1 / 1 shared
Zabeen, S.
1 / 1 shared
Attallah, Moataz Moataz
1 / 96 shared
Fitzpatrick, M. E.
1 / 20 shared
Cardwell, Da
1 / 15 shared
Shi, Yh
1 / 4 shared
Zhai, W.
1 / 1 shared
Mochizuki, H.
1 / 1 shared
Fujishiro, H.
1 / 7 shared
Dennis, Ar
1 / 12 shared
Namburi, Dk
1 / 5 shared
Ainslie, Md
1 / 13 shared
Smith, L.
1 / 6 shared
Yarrison-Rice, J.
1 / 2 shared
Jagadish, C.
1 / 23 shared
Kang, J.
1 / 8 shared
Jackson, H.
1 / 1 shared
Joyce, H.
1 / 6 shared
Gao, Q.
4 / 22 shared
Paiman, S.
4 / 10 shared
Tan, H.
1 / 8 shared
Kim, Y.
4 / 16 shared
Kang, J. H.
1 / 2 shared
Jackson, H. E.
3 / 16 shared
Joyce, H. J.
3 / 7 shared
Yarrison-Rice, J. M.
3 / 7 shared
Smith, L. M.
3 / 15 shared
Zhang, X.
2 / 65 shared
Kucheyev, S. O.
10 / 18 shared
Williams, J. S.
10 / 39 shared
Li, G.
7 / 31 shared
Timmers, H.
1 / 2 shared
Hamza, A. V.
1 / 4 shared
Evans, Cheryl
1 / 1 shared
Nelson, A. J.
1 / 2 shared
Guo, S.
1 / 11 shared
Ferguson, I. T.
1 / 6 shared
Manasreh, M. O.
1 / 13 shared
Pophristic, M.
1 / 4 shared
Titov, A. I.
1 / 3 shared
Fatima, S.
1 / 2 shared
Gerald, J. D. Fitz
1 / 3 shared
Chou, C. T.
1 / 1 shared
Cockayne, D. J. H.
1 / 4 shared
Chart of publication period
2023
2016
2011
2009
2004
2003
2002
2001
2000

Co-Authors (by relevance)

  • Leo, J. R. O.
  • Zabeen, S.
  • Attallah, Moataz Moataz
  • Fitzpatrick, M. E.
  • Cardwell, Da
  • Shi, Yh
  • Zhai, W.
  • Mochizuki, H.
  • Fujishiro, H.
  • Dennis, Ar
  • Namburi, Dk
  • Ainslie, Md
  • Smith, L.
  • Yarrison-Rice, J.
  • Jagadish, C.
  • Kang, J.
  • Jackson, H.
  • Joyce, H.
  • Gao, Q.
  • Paiman, S.
  • Tan, H.
  • Kim, Y.
  • Kang, J. H.
  • Jackson, H. E.
  • Joyce, H. J.
  • Yarrison-Rice, J. M.
  • Smith, L. M.
  • Zhang, X.
  • Kucheyev, S. O.
  • Williams, J. S.
  • Li, G.
  • Timmers, H.
  • Hamza, A. V.
  • Evans, Cheryl
  • Nelson, A. J.
  • Guo, S.
  • Ferguson, I. T.
  • Manasreh, M. O.
  • Pophristic, M.
  • Titov, A. I.
  • Fatima, S.
  • Gerald, J. D. Fitz
  • Chou, C. T.
  • Cockayne, D. J. H.
OrganizationsLocationPeople

document

III-V compound semiconductor nanowires

  • Jackson, H. E.
  • Gao, Q.
  • Joyce, H. J.
  • Yarrison-Rice, J. M.
  • Paiman, S.
  • Smith, L. M.
  • Zhang, X.
  • Zou, J.
  • Kim, Y.
Abstract

<p>GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.</p>

Topics
  • nanoparticle
  • compound
  • semiconductor
  • defect
  • chemical vapor deposition