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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Oconnor, R.
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Publications (7/7 displayed)
- 2022Aluminium oxide formation via atomic layer deposition using a polymer brush mediated selective infiltration approachcitations
- 2020Aluminium oxide formation via atomic layer deposition using a polymer brush mediated selective infiltration approachcitations
- 2019Hard x-ray photoelectron spectroscopy study of copper formation by metal salt inclusion in a polymer filmcitations
- 2019Characterisation of Electroless Deposited Cobalt by Hard and Soft X-ray Photoemission Spectroscopy
- 2018Nucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayerscitations
- 2016In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applicationscitations
- 2011Modelling the evaporation of boron species. Part 1: Alkali-free borosilicate glass melts:
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document
Characterisation of Electroless Deposited Cobalt by Hard and Soft X-ray Photoemission Spectroscopy
Abstract
<p>Electroless deposited (ELD) cobalt with palladium as a catalyst, and an underlying self-assembled monolayer (SAM) was investigated for potential use in advanced complementary metal oxide semiconductor (CMOS) applications using both hard (HAXPES) and soft (XPS) x-ray photoelectron spectroscopy. HAXPES spectra established the uniformity of the deposited Co film and the nature of the buried Co-Si interface 20nm below the surface. The Pd is seen to diffuse through the Co following thermal annealing. While the deposited Co film is predominantly metallic, Co-silicide forms at the Co-Si interface upon deposition and decomposes with thermal anneal up to 500°C.</p>