Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2015A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin films3citations

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Matteis, Fabio De
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Davoli, Ivan
1 / 7 shared
Martins, Rodrigo
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Branquinho, Rita
1 / 21 shared
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2015

Co-Authors (by relevance)

  • Matteis, Fabio De
  • Davoli, Ivan
  • Martins, Rodrigo
  • Branquinho, Rita
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document

A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin films

  • Ullaha, Sana
  • Matteis, Fabio De
  • Davoli, Ivan
  • Martins, Rodrigo
  • Branquinho, Rita
Abstract

Aluminum Zinc Oxide has been extensively investigated as a cheap alternative to transparent conducting tin oxide films for electronic and optoelectronic applications. Thin films of Aluminum Zinc Oxide have been developed successfully through a combination of solution combustion synthesis and solution synthesis. Zn(NO3)3textperiodcentered6H2O as metal source was dissolved in 2-methoxyethanol as solvent through combustion synthesis with Urea as fuel while dopant source of AlCl3textperiodcentered6H2O was mixed separately in solvent to avoid aluminum oxide formation in the films. Precursor solutions were obtained mixing ZnAl separate solutions in 9:1, 8:2, and 7:3 ratios respectively with oxide, fuel and dopant concentrations of 0.5, 0.25, 0.1, and 0.05 M. The film stacks have been prepared through spin-coating with heating at 400°C for 10 minutes after each deposition to remove residuals and evaporate solvents. Thermal annealing in oven at 600°C for 1 hour followed by rapid thermal annealing at 500°C600°C first in vacuum and then in N2-5%H2 environment respectively for 10 minutes each reduced the resistivity of film stacks. Film stack with 10 layers for an average thickness of 0.5$m gave the best Hall Effect resistivity of 3.2 × 10-2 $-cm in the case of 0.5M solution with Zn:Al mixing ratio of 9:1 for RTA annealings at 600°C with an average total transparency of 80 % in the wavelength range of 400-1200 nm. The results show a clear trend that increasing the amount of ingredients resistivity could further be decreased.

Topics
  • Deposition
  • resistivity
  • thin film
  • aluminum oxide
  • aluminium
  • zinc
  • combustion
  • annealing
  • tin