| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rao, V. Ramgopal
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2015Spin-coatable, photopatternable magnetic nanocomposite thin films for MEMS device applicationscitations
- 2015Insight into the charge transport and degradation mechanisms in organic transistors operating at elevated temperatures in aircitations
- 2015Source/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrinscitations
- 2013Anisotropic strain effect on electron transport in C60 organic field effect transistorscitations
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document
Source/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrins
Abstract
Pentacene-based Organic Field Effect Transistors (OFETs) are promising platforms for sensing and computing applications. However, due to the chemical reactivity of the organic semiconductor, electrodes cannot be lithographically patterned after the semiconductor is deposited. Deposition of electrodes before the semiconductor material, on the other hand leads to an interface degradation that impacts performance of the organic transistor. In this work, we show for the first time application of porphyrin self-assembled monolayers (SAMs) for work function tuning of metal source/drain electrodes for organic transistor applications. We report the effect of various metal complexed porphyrin SAMs on the surface energy of the electrode and morphology of organic semiconductor and investigate the physical properties as well as electrical characteristics of OFETs with these SAMs.