693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Tas, Niels Roelof
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2016Ultra-thin nanochannel-based liquid TEM cell for EELS analysis and high resolution imaging
- 2013Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline siliconcitations
- 2010Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabricationcitations
- 2008Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithographycitations
- 2008Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
- 2007Simple technique for direct patterning of nanowires using a nanoslit shadow-maskcitations
- 2005Multifunctional tool for expanding afm-based applicationscitations
- 20041-D nanochannels fabricated in polyimidecitations
- 2003Wet anisotropic etching for fluidic 1d nanochannelscitations
- 2002Wet anisotropic etching for fluidic 1D nanochannels
- 2001Failure mechanisms of pressurized microchannels, model, and experimentscitations
- 2000Failure mechanisms of pressurized microchannels, model and experiments
Places of action
| Organizations | Location | People |
|---|
document
Failure mechanisms of pressurized microchannels, model and experiments
Abstract
Microchannels were created by fusion bonding of a Pyrex and a thermally oxidized silicon wafer. The maximum pressure which can be applied to these channels was investigated. In order to find the relation between this maximum pressure, channel geometry, materials elasticity and bond energy an energy model was developed. It was shown that the model is substantiated by the pressure data, from which it could be calculated that the effective bond energy increased from 0.018 J/m2 to 0.19 J/m2 for an annealing temperature ranging from 3 10°C to 47OoC.