• Kampen, Chris P. Van
• Tas, Niels R.
• Gardeniers, Han
• Sanders, Remco G.
• Berenschot, Erwin J. W.
• Burger, Gert Jan
• Tiggelaar, Roald M.

Abstract

<p>We introduce a massive parallel NEMS flow restriction nano-slit array fabricated in a wafer scale process using self-aligned 3D-nanolithography on sharp convex corners created by anisotropic etching of the silicon crystal. The device consists of an array of 50.000 slits, all having a length of ∼360 nm and a width of ∼6 nm. A relatively low resistance (short pore throat) configuration ensures high throughput on the order of 25μ g/s at 4 bar differential pressure. A dedicated hierarchical mechanical design consisting of on-membrane supports within a larger support structure enables operation pressures over 6 bar.</p>

Topics

• pore
• anisotropic
• Silicon
• etching
• aligned