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Publications (5/5 displayed)
- 2017Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω techniquecitations
- 2015Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor depositioncitations
- 2013Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substratecitations
- 2008Growth and Characterization of High-Performance GaN and AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substratescitations
- 2007A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substratescitations
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article
A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substrates
Abstract
<p>AlxGa1-xN(x = 0.05) ultraviolet (UV) avalanche photodiodes grown on a GaN substrate are reported. The epitaxial structure was grown by metal-organic chemical vapor deposition on a free-standing bulk GaN substrate having low dislocation density. The growth conditions for AlxGa1-xN epitaxial layers on GaN substrates were optimized to achieve improved crystalline and structural quality. With UV illumination at lambda similar to 250 nm, devices with mesa diameters of similar to 30 mu m achieve stable maximum optical gains of similar to 50 at a reverse bias voltage of similar to 87 V.</p>