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Lever, P.
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Publications (6/6 displayed)
- 2005In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor depositioncitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2004InGaAs quantum dots grown with GaP strain compensation layerscitations
- 2003Proton-irradiation-induced intermixing of InGaAs quantum dotscitations
- 2002Growth of InGaAs quantum dots by metal organic chemical vapour deposition
- 2002Production and processing of semiconductor nanocrystals and nanostructures for photonic applications
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article
Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot lasers
Abstract
<p>Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.</p>