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article
Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge
Abstract
<p>The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside the ridge. This provides selective loss for the first-order lateral mode and delays the onset of the beam steering associated with kinks in the power output - current characteristic. The method is very simple and can be applied for any kind of ridge-waveguide semiconductor laser diode device.</p>